InN nanorods and nanowires grown on different substrates

Abstract

AbstractTransmission Electron Microscopy was applied to study InN nanorods grown by non‐catalytic, template‐free hydride metal‐organic vapor phase epitaxy (solid‐vapor mechanism) and nanowires grown by a vapor‐liquid‐solid growth (VLS) mechanism in a MOVPE reactor. The nanorods and nanowires were grown on different planes of Al2O3, (0002) GaN/ Al2O3, and (001) Si. The majority of nanorods have a high structural perfection and exhibit abrupt side walls, but some of them show formation of the planar defects. Depend‐ ing on the substrate used, the size, shape and tips of the nanorods vary from hexagonal to pencil‐like. Nanowires, however have very corrugated surfaces along their side‐walls and tips, and depending on the V/III flow ratio these nanowires can have either a constant diameter or taper‐off. Their length can extend up to 100 μm. Bending and branching of nanowires was observed, but this phenomenon was never observed for nanorods. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)