InN layers grown by MOCVD on [formula omitted] substrates

Abstract

Epitaxial wurtzite InN thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) SrTiO 3 (STO) substrates. Interestingly, twin domain epitaxy induced by the surface reconstruction of STO is observed with the in-plane orientation relationships of [ 1 ¯ 1 0 0 ] InN ∥ [ 1 ¯ 1 0 ] STO and [ 2 1 ¯ 1 ¯ 0 ] InN ∥ [ 1 ¯ 1 0 ] STO , which is helpful to release the strain. The InN films on STO substrates exhibit a strong photoluminescence emission around 0.78 eV. Particularly, using STO substrates opens up a possibility to integrate InN with the functional oxides.