InN grown by remote plasma-enhanced chemical vapor deposition

Abstract

We present in this paper recent optical and electrical characterization results for InN thin films prepared by remote plasma-enhanced chemical vapor deposition. A series of samples were grown at different temperatures from 300°C to 500°C on Si and sapphire substrates. Films have been characterized by X-ray diffraction, and Hall measurements. Optical absorption data have 1–1.8 eV absorption edges, dependent on growth temperature and growth period. Films over 10 μm thick have been grown. For samples grown on sapphire, the variation of electrical properties depends on sample thickness.