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Abstract
AbstractThis paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750 ºC. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano‐crystalline InN rods with various shapes are grown directly on sapphire substrates. X‐ray diffraction rocking curves for the (002) InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nano‐rods and 460 arcsec for the continuous layers. InxGa1–xN layers with InN content up to 10 mol.% are grown on GaN/sapphire templates. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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