Abstract
The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two non-radiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.
Highlights
Nitride−based alloys, such as AlN, GaN and InN, have achieved great success in the applications of optoelectronic devices such as light emitting diodes [1, 2], lasers [3,4,5], solar cells [6,7,8], and photodetectors [9,10,11,12]
One solution is to use molecular beam epitaxy (MBE), in which the substrate temperature can be controlled such that the incoming indium atoms can be deposited via surface chemical reaction, and great results in light emitting diode and solar cells [19, 20] have been demonstrated
In a practical metal organic chemical vapor deposition (MOCVD) system, the growth temperature is often more than 800°C, which can be detrimental to the InN layer due to low evaporation point of indium [16]
Summary
Nitride−based alloys, such as AlN, GaN and InN, have achieved great success in the applications of optoelectronic devices such as light emitting diodes [1, 2], lasers [3,4,5], solar cells [6,7,8], and photodetectors [9,10,11,12]. In a practical metal organic chemical vapor deposition (MOCVD) system, the growth temperature is often more than 800°C, which can be detrimental to the InN layer due to low evaporation point of indium [16]. Such limitation restrains the subsequent growth of the capping layer and affect the overall epitaxial layer design [21, 22]. The extended InN absorption peak and photoluminescence peak shift phenomenon can be observed in both cryogenic and room temperature This ZnO/LT-GaN/InN hetero-structure was manufactured into an infrared-ready photodetector with an external quantum efficiency as high as 3.55% at 1650 nm
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