Abstract
Hall mobilities of InN and In1−xGaxN are calculated by an iterative method. All important scattering mechanisms are taken into account in these calculations. The effect of dislocation scattering on Hall mobility of InN at a carrier concentration of 10 17 cm −3 is investigated in the temperature range of 30–600K. Hall mobility of InN decreased with increasing dislocation density. Both dislocation and alloy disorder scatterings dependence on mobility in In1−xGaxN are examined as x (composition) varies from 0.0 to 1.0 at 77K and 300K. We observed that the Hall mobility of In1−xGaxN decreases up to x=0.3 at 300K and up to x=0.5 at 77K because of dislocation scattering.
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