Abstract
Quantum dots light-emitting diodes (QLEDs) have attracted much interest owing to their compatibility with low-cost inkjet printing technology and potential for use in large-area full-color pixelated display. However, it is challenging to fabricate high efficiency inkjet-printed QLEDs because of the coffee ring effects and inferior resistance to solvents from the underlying polymer film during the inkjet printing process. In this study, a novel crosslinkable hole transport material, 4,4'-bis(3-vinyl-9H-carbazol-9-yl)-1,1'-biphenyl (CBP-V) which is small-molecule based, is synthesized and investigated for inkjet printing of QLEDs. The resulting CBP-V film after thermal curing exhibits excellent solvent resistance properties without any initiators. An added advantage is that the crosslinked CBP-V film has a sufficiently low highest occupied molecular orbital energy level (≈-6.2 eV), high film compactness, and high hole mobility, which can thus promote the hole injection into quantum dots (QDs) and improve the charge carrier balance within the QD emitting layers. A red QLED is successfully fabricated by inkjet printing a CBP-V and QDs bilayer. Maximum external quantum efficiency of 11.6% is achieved, which is 92% of a reference spin-coated QLED (12.6%). This is the first report of such high-efficiency inkjet-printed multilayer QLEDs and demonstrates a unique and effective approach to inkjet printing fabrication of high-performance QLEDs.
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