Abstract
Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the printed 2D material TFTs. In the search for TFTs with high current ratios, we introduce a stable and efficient method of nitrogen-doped graphene (NDG) ink preparation for inkjet printing by liquid-phase exfoliation. The NDG thin film is print-stacked with molybdenum disulfide (MoS2) by multiple printing passes to construct a MoS2–NDG stack. We demonstrate top-gated fully inkjet-printed MoS2–NDG transistors with silver drain, source, and gate electrodes, and a barium titanate (BaTiO3) dielectric. A 100% inkjet-printed MoS2–NDG vertical 2D active heterostructure layer transistor with a current on/off ratio of 1200 is exhibited. The results may lead towards the development of all-printed 2D material-based transistor switches.
Highlights
Graphene and related two-dimensional (2D) materials remain at the center of research for more than a decade because of their exciting and unusual properties [1]
Because of the band gap opening in nitrogen-doped graphene (NDG), it has a great potential to be an excellent material for inkjet-printed transistors with high current ratios when coupled with semiconducting MoS2
The flake dimensions must match the requirements of drop-on-demand (DOD) printing
Summary
Graphene and related two-dimensional (2D) materials remain at the center of research for more than a decade because of their exciting and unusual properties [1]. Due to the absence of band gap, the typical current on/off ratio of pristine graphene thin-film transistors (TFTs) is approximately 5 [3]. TFTs, the inkjet-printed graphene transistors had current ratios of ≈10 [2,5]. The channel materials were spray coated, the source and drain electrodes were deposited by electron beam (e-beam) evaporation, and the liquid electrolyte was drop casted [12] Their reported all-printed TFTs with inkjet-printed graphene source, drain, and gate, and tungsten diselenide (WSe2 ) channel, a spray-coated porous boron nitride (BN) electrochemical separator (not a dielectric), and a drop-casted ionic liquid, displayed on/off ratios of ≈25. Because of the band gap opening in NDG, it has a great potential to be an excellent material for inkjet-printed transistors with high current ratios when coupled with semiconducting MoS2. The all-printed transistor displays a current on/off ratio of 1200
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