Abstract
Cu2ZnSn(S, Se)4-based solar cells with total area (0.5 cm2) power conversion efficiency of 6.4% are demonstrated from thin film absorbers processed by inkjet printing technology of Cu-Zn-Sn-S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.
Highlights
We report on the development of CZTSSe absorbers with improved properties based on inkjet printing using a sodium containing Cu-Zn-Sn-S precursor ink
In the Grazing incident X-ray diffraction (GIXRD) patterns of the annealed sample, the presence of characteristic peaks at around 36.2° and 43.1° which can be assigned to (211) and (213) lattice planes of kesterite CZTSSe indicates the formation of kesterite CZTSSe.[22]
Since secondary phases like Cux(S, Se) and SnS show a major peak at around 31° and 31.6°, respectively, which is overlapping with the broad peak centered at around 31.8° labeled as CZTSSe (004/200), ZnO, and MoSe2, the existence of secondary phases of CuS and SnS cannot be ruled out
Summary
The contact angle was determined to be 21.6° for DMSO solvent as shown, which is an indication of very good wetting behavior between DMSO and Mo. Figure 1d shows that an increase of the contact angle to 42.4° was observed for the Cu-Zn-Sn-S precursor ink which is used for inkjet printing of CZTSSe absorbers in this work. The contact angle is still below 90°, suggesting the feasibility for the formation of a homogeneous film on Mo substrate by printing.
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