Abstract
Photosensitive large-block p-type cadmium telluride (p-CdTe) film with a resistivity of ρ ≈ 106−107 Ω cm has been used to create an Al-p-CdTe-Mo structure with a Schottky barrier, which exhibits the properties of an injection photodiode. Being switched in the forward current passage direction (with “+” on the Mo contact) at high illumination levels, the proposed structure exhibits a responsivity of Sλ ≈ 2.6 A/W at a wavelength of λ = 0.625 μm, which is about five times the spectral response of the ideal photodetector for this wavelength range.
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