Abstract
We report results of characterization of injection microdisk lasers based on active layers employing 2, 5 and 10 layers of InGaAs quantum well-dot structures. The microlasers operate in continuous wave regime at room temperature without external cooling. The minimal microdisk diameter 10 µm is obtained for 5 layers of InGaAs quantum well-dot structures. Lasing wavelength is around 1.1…1.15 µm, minimal threshold current is 1.6 mA (threshold current density 900 A/cm2).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
