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Abstract
Measurements of the dependence of the effective surface recombination velocity Seff at the Si-SiO2 interface on light-induced carrier concentration are presented. Contactless lifetime measurements by modulated free-carrier IR absorption with additional bias light and by photoconductance decay measurements of samples immersed in HF were used to extract Seff for varying illumination levels. For various dopant concentrations the measured surface recombination velocities are compared with theoretical predictions calculated using an extended Shockley–Read–Hall formalism for Si-SiO2 interfaces. Good agreement was obtained. The consequences for solar cell performance and lifetime measurement techniques are discussed.
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