Abstract
AbstractOptical properties of III‐nitride quantum well (QW) structures grown on nonpolar or semipolar crystallographic planes benefit from reduced internal fields in QWs and, as a result, from enhanced overlap between electron and hole states participating in lasing transition. Detailed modelling of active QWs shows, however, that smaller separation of the lasing states from the high‐energy subbands in nonpolar QWs and related thermal carrier redistribution between subbands can reduce the QW differential optical gain thus increasing the laser threshold. Efficiency characteristics of multiple QW emitters are additionally affected by inhomogeneous QW injection and by large residual QW charges. Polar and nonpolar light‐emitting diode structures reveal different mechanisms of the efficiency droop. In polar structures, the droop is dominated by electron leakage and is noticeably affected by the active region ballistic overshoot. Efficiency droop in nonpolar structures is dominated by combined effect of radiative time saturation and nonradiative Auger recombination while the carrier leakage becomes a factor of secondary importance. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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