Injection current model fit in p-channel floating gate MOS transistors using the Levenberg-Marquardt method

Abstract

The Levenberg-Marquardt optimization method is an iterative numerical technique that can be used to deal with the problem of least squares curve fitting. In particular, in this work it is used to fit the parameters involved in a semi-empirical model of the pFGMOS describing the hot-electron injection current. The injection current is a physical mechanism by which the electrical charge on the floating gate in pFGMOS transistors can be modified. This paper describes the use of the Levenberg-Marquardt algorithm for processing measurement data from an experimental pFGMOS cell fabricated in 0.5-micron standard CMOS technology.