Abstract
Transport of the acceptor-passivating hydrogen species in p-type GaAs has been observed in reverse bias annealed Al Schottky diode samples. The motion of the positively charged hydrogen across the depletion region of these diodes is confirmed both by changes in the electrically active acceptor profiles with time, and by direct measurement of the migration using secondary-ion mass spectrometry on deuterated samples. Acceptor passivation is unstable under minority-carrier injection by illumination at 25 °C. Hydrogen injection into p-type GaAs during boiling in water or etching in H2SO4:H2O2:H2O has also been demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
