Abstract
Aging experiments of Zn-diffused GaAs injection lasers have been performed at liquid-nitrogen temperature. Results of degradation tests are consistent with the Kressel and Byer postulation that new nonradiative recombination centers are formed. Evidence of the formation of these new centers are deduced from measurements of the injected carrier lifetime which decreases during laser degradation. Variations of the external quantum efficiency and the threshold current correlate with the changes of the carrier lifetime.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
