Abstract
We describe a quantum memory spectral preparation strategy that maximises memory efficiency and bandwidth in materials such as 167 Er3+:Y2SiO5 in a high field regime, where the hyperfine structure is resolved. We demonstrate the method in 167 Er3+:Y2SiO5 by preparing spectrally isolated 18 dB-absorbing features on a < 1 dB background. Using these features we create an atomic frequency comb and show quantum storage of 200 ns pulses with 22% efficiency, limited by the background absorption which arises from laser instability. We describe the experimental improvements needed to reach the material limits: O(1) s spin state storage, O(100) MHz bandwidth, and > 90% efficiency.
Highlights
Quantum memories are an important component in most applications of quantum information, including both largescale quantum computing and long-distance secure communication [1,2]
Protocol used, but the base requirement is a high absorption on the ions participating in the memory and low absorption on any spectator ions
The bandwidth is determined by the maximum width of a transmissive window that can be created at the storage frequency, since spin-state storage protocols all require resonant spectator ions to be shifted to a nonresonant state
Summary
7 2 g, with potential memory bandwidth and location (shaded gray areas) and possible spin storage systems indicated (see text). 7 2 g level is better suited for the memory ions since the oscillator strengths of the | mI | > 0 transitions required for spin-state storage increase with decreasing mI (g). We show possible systems suitable for spin-state storage. Option (1) has a higher oscillator strength on the optical storage transition, more suitable for a free-space implementation such as that shown here. It may be suitable for the cavity implementations, discussed at the end of this Letter, where peak optical depth does not limit the memory efficiency.
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