Initial stages of CaF/sub 2/ growth and wetting layer formation on Si[001

Abstract

It has been recently found that different types of CaF/sub 2/ nanostructures can be formed on Si[001] substrates depending on the growth conditions. Below 500/spl deg/C, nearly square-shaped dots nucleate on bare Si[001] surface; above 650/spl deg/C, at submonolayer coverage, a so-called layer forms. At higher coverage, formation of CaF/sub 2/ stripes of a few nanometers in height and width takes place on top of the wetting layer. Interestingly, CaF/sub 2/ [001]/spl par/ Si[001] in the dots and CaF/sub 2/ [110]/spl par/ Si[001] in the stripes. In this work, initial stages of CaF/sub 2/ epitaxial growth on Si[001] were studied by atomic force microscopy and photoemission spectroscopy with emphasis on formation and chemical composition of the wetting layer.