Abstract
X-ray photoelectron spectroscopy and atomic force microscopy are employed in the characterization of the first stages in the growth of carbon layers on a (001) Si substrate which is not scratched with diamond powder before placing it in an Ar–2%CH4–H2 plasma discharge. Results show that the first layers could be formed in SiC grains where the carbon diamond particles nucleate. The high nucleation density of 1.109–5.109 nuclei. cm−2 and the low aggregates density lead to a smooth surface.
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