Abstract
AbstractDetailed analysis of Ti and/or TiSi2 islands growth have been made by UHV-STM observations after Ti deposition and subsequent annealing. It is shown that islands growth mode changes drastically at about 500 U for both cases on Si(111)-7×7 and on H-terminated Si(lll)-l×l. In the temperature regime higher than 500 °C, activation energies of islands growth are 1.12eV and 0.56eV for Si(M11)-7×7 and H-terminated Si(111) respectively. It is speculated that residual H-atoms combined with Si dangling bonds lowered surface diffusion activation energy.
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