Abstract
First stages of GaAs, AlAs and GaAs-on-AlAs growth on Si by atomic layer molecular beam epitaxy (ALMBE) and conventional MBE has been studied by in situ RHEED and Auger electron spectroscopy (AES) techniques and by high resolution electron microscopy (HREM) after growth. Our results allow us to assess the growth conditions necessary to achieve monolayer by monolayer growth of GaAs on Si.
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