Abstract
Two SiC single crystal ingots were prepared using sublimation PVT techniques through the different process procedure and then their crystal quality was systematically compared, because the present research was focused to improve the quality of SiC crystal by modifying the initial stage of the PVT growth. Before the main growth step for growing SiC bulk crystal, initial stage period where growth rate was kept to relatively low rate of <10μm/h was introduced to conventional process procedure. N-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC was successfully fabricated. As compared to the characteristics of SiC crystal grown using the conventional schedule, the quality of SiC crystal grown with modifying the initial stage was significantly improved, exhibiting decrease of defect formation such as micropipe and polytype formation.
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