Abstract

We have observed the initial oxidation process on Si(001) at $20\char21{}700\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ in ${10}^{\ensuremath{-}7}\char21{}{10}^{\ensuremath{-}4}$ Torr ${\mathrm{O}}_{2}$ pressure by high-resolution Rutherford backscattering spectroscopy. The oxygen coverage saturates at $1.45\ifmmode\pm\else\textpm\fi{}0.2$ ML (1 $\mathrm{ML}=6.78\ifmmode\times\else\texttimes\fi{}{10}^{14}$ ${\mathrm{cm}}^{\ensuremath{-}2})$ and $2.3\ifmmode\pm\else\textpm\fi{}0.3$ ML at room temperature (RT) and $640\ifmmode^\circ\else\textdegree\fi{}\mathrm{C},$ respectively. The oxidation of the second layer is found to start before the first layer oxidation is completed even at RT. Further oxidation proceeds basically in the layer-by-layer mode, although there is a compositional transition layer of sub-nm thickness in the interface.

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