Abstract
We have investigated the initial oxidation stage of an Si(111)-(7×7) surface using valence-band photoemission measurements. As the oxygen exposure increases, the intensities of the dangling bond states of adatoms (S 1) and rest atoms (S 2) decrease. Among the four oxygen-induced states, three originate from the orbitals of adsorbed oxygen species, and one originates from the dangling bonds of adatoms with more than one oxygen atom adsorbed into its back-bond. Taking the dosage-dependent intensity of this modified dangling bond state into account, we conclude that the first adsorption site of oxygen is the back-bond of an adatom.
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