Abstract
In N-rich growth conditions, prismatic domains were formed in the initial stage of a cyclotron assisted MBE of GaN over 6H-SiC (0001). They exhibit {10 0} facets and are either voids or amorphous phase. Their density is of a few 109 cm−2 and they are located in a 50 nm layer closest to the substrate surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: MRS Internet Journal of Nitride Semiconductor Research
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
