Abstract
ABSTRACTInitial growth of microcrystalline silicon μ-Si:H) deposited on an atomically flat GaAs (001) wafer using a RF glow-discharge decomposition of hydrogen diluted monosilane gas mixture has been studied by means of atomic force microscope (AFM), Auger electron spectroscopy (AES), and cross-sectional transmitssion electron microscopy (XTEM).It is shown that the initial growth of μc-Si:H deposited at a substrate temperature of 50∼250°C consists of four successive stages, i.e., (1) a layer-by-layer growth of a-Si:H up to d ∼5 Å, (2) island formation of a-Si:H, (3) the coalescence of the islands and the nucleation of microcrystallite at d∼ 10–40 Å depending on the growth temperature, and (4) a rapid roughening with microcrystalline growth.
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