Abstract
We report on the initial growth mechanism of GaAs on vicinal Si(110) substrates grown by molecular beam epitaxy, for the first time, while considering the effects of the substrate off-angle and direction on the crystalline quality of GaAs films. The quality was improved with an increase of the off-angles, and was strongly influenced by the off-direction. The off-direction towards the [001] was better than that towards [1 1 0] for obtaining high quality films. We believe that this is related to a difference in the step structure. We infer from the results of reflection high-energy electron diffraction, double-crystal X-ray diffraction, atomic force microscopy and plan view transmission electron microscopy that GaAs films on vicinal Si(110), with off-angles of 5°–7° towards the [001] direction, grow regularly along the [1 1 0] step edges at mono-atomic layer steps. On these step edges, the films grow to a thickness of 3 nm in a step flow like mode, and connect with each other through step-bunching at large steps having a height of 5 nm.
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