Abstract
The initial stage of Ge adsorption on Si(1 1 1)-(7×7) surface has been investigated by ultrahigh-vacuum scanning tunneling microscopy at room temperature. We demonstrate that there is a critical nucleus for the adsorbed Ge clusters on Si(1 1 1)-(7×7) surface. Such clusters can behave like quantum dots, which display two states at +1.5 and −1.5 eV with respect to the Fermi level. The formation mechanism of the clusters is discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
