Abstract
Indium interlayers with thickness of 0,0.1,0.5,1 nm were deposited respectively before wurtzite InN was grown on silicon substrate by plasma-assisted molecular beam epitaxy(PAMBE).X-ray diffraction(XRD) spectra,scanning electron microscope(SEM),absorption and photoluminescence(PL) spectra were adopted to analyze the influence of indium interlayer on the crystal and optical properties of InN.XRD and SEM results indicate that indium interlayer with the thickness of 0.5 nm can improve the morphology of InN epitaxial with larger crystalline grains and have a better crystal quality.Absorption and PL spectra show that the sample with 0.5 nm indium interlayer exhibits the smallest blue-shift of absorption edge,the narrowest FWHM of PL spectra and the best near-band-edge radiative recombination efficiency.In conclusion,indium interlayer with appropriate thickness does have a positive influence on the crystal and optical properties of InN grown on silicon substrate.
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