Abstract
An approach is proposed to determine parameters of homogeneous and inhomogeneous broadening for reflection lines of quasi-two-dimensional excitons in semiconductor quantum well structures. A phenomenological model is developed taking into account fluctuations of the exciton energy which are expected to cause inhomogeneous broadening of exciton reflectivity lines. This concept is applied to magneto-optical studies of CdTe/(Cd,Mg)Te single quantum well heterostructures containing a two-dimensional electron gas. By the analysis of excitonic reflection spectra in magnetic fields the parameters of homogeneous and inhomogeneous broadening of the exciton as well as their temperature dependencies were obtained.
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