Abstract
A brief review is given of some of the methods used to describe incorporation of impurities into silicon crystals grown from the melt. It is concluded that the concept that allows the equilibrium segregation coefficient to vary to an “effective” segregation coefficient is misleading and disguises the actual solid/liquid dynamics. Impurity concentration is controlled in crystals by their actual (changing) concentration at the interface and their equilibrium (essentially constant) segregation coefficient. This paper presents calculations on the effect of growth rate on impurity incorporation. Growth rate fluctuations lead to solute nonuniformities on a microscale with dopant, carbon, and metals concentrated into areas of a silicon slice separate from oxygen‐rich “swirl” bands. The measured fluctuation in dopant concentration across a slice can be used to estimate other impurity concentration variations. Discrepancies between experimentally determined and the calculated values are considered to result primarily from lack of an appropriate value of boundary layer thickness.
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