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Abstract
The homogeneity of n-type Sn and S doped and semi-insulating Fe doped InP crystals is studied by luminescence topography, low temperature luminescence, and Raman scattering. As in GaAs nonrelational striations and faceting are the main sources of inhomogeneous impurity distribution in doped crystals and dislocations in semi-insulating ones. The fluctuations in free carrier concentration influencing the luminescence intensity are independently proved by Raman scattering spectra. Die Homogenitat von n-leitenden, Sn- und S-dotierten In P-Kristallen sowie von semi-isolierendcn, Fe-dotierten InP-Kristallen wird mittcls Lumineszenztopografie. Tieftemperaturlumineszenz und Ramanstreuung untersucht. Wie im GaAs bilden Striations und Fazettenbildung die Hauptquellen fur inhomogene Strorstellenvertcilung in dotiertcn Kristallen und Vcrsetzungen in semi-isolierenden. Die Fluktuationen der Konzentration freier Trager, die die Lumineszenzintcnsitat beeinflussen, werden unabhangig mittels Ramanstreuspektren uberpruft.
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