Abstract
The buffer layers can improve significantly the ruggedness of a high voltage diode, but the inhibition mechanism on current filaments is unclear. In this paper, an analysis of the electric field gradient analytical model is used to explain the peak electric field shifting of high voltage diode with buffer layers during reverse recovery, and the influence of the buffer layers on current filament during reverse recovery is analyzed. Electrothermal simulations show that the peak electric field shifting even occurs before dynamic avalanche, leading to the appearance of the positive differential resistance. A self-stabilizing mechanism that the increase of the electric field strength in buffer layers is restrained after the peak electric field shifting is found. This provokes the weak dynamic avalanche inside high voltage diode, and the current filaments are inhibited.
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