Abstract
We demonstrate that the thickness increase of the porous layer on p-type (1–10 ohm-cm) silicon can be inhibited from hundreds to several nm/min in regular anodizing by exposure to He–Ne laser irradiation. During 2.0 mW laser irradiation, the growth in thickness was reduced to 5–6 nm/minute by anodizing with a current density of 10 mA/cm2. The inhibition effect on the thickness increase of porous silicon depends significantly on the laser power during a fixed anodizing time.
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