Abstract
The effect of a metal-support reaction occurring during high-temperature treatment in hydrogen, on the deposition of carbon from acetylene on Ni SiO 2 thin films was studied by transmission electron microscopy and electron diffraction. It was found that increasing the temperature of the hydrogen treatment from 770 K to 970 K. resulted in minor changes in morphology of the Ni deposit, which drastically altered its reaction behavior. The formation of Ni 3C carbide was hindered, and a new FCC NiC x phase with a lattice parameter of 0.362 nm occurred during reaction at 520 K. At 800 K, the total amount of deposited carbon was greatly reduced, and its morphology changed from filamentous into encapsulating, shell-like. Growth of an α-Ni(Si) solid solution during hydrogen treatment at 970 K is proposed to account for the observed effects.
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