Inherent and induced defects in mixed-phase CuO nanoparticles

Abstract

Copper (Cupric) oxide is a readily synthesized, non-toxic metal oxide with a wide range of uses, including the treatment of water, the manufacture of electronic devices, solar cells, cathodes for lithium-ion primary batteries, gas sensors, electrochromic devices, supercapacitors, and field effect transistors. The effects of Zn doping in CuO in three different concentrations (weights %) were investigated. The band gap and carrier concentration were altered due to the formation of defect energy states, lattice stresses, and the formation of ZnO, and Cu2O in addition to CuO. Temperature increases from room temperature resulted in the production of metal oxides with preferred crystal growth in specific orientations. An increase in temperature, from 300 °C to 500 °C, generated residual strain release and atomic diffusions, resulting in grain growth and a reduction in the band gap. The changes in UV and PL spectra predicted the growth kinetics involved