Abstract
The Cu/Ni substrates were fabricated at low defect densities of the Ni substrates by RF magnetron sputtering and the composition of Cu atoms on Ni substrates were modulated by the sputtering time. The high-quality graphene films were fabricated on the Cu/Ni substrates by hot filament chemical vapor deposition system (HFCVD). The ID/IG ratios were very low (<<0.1) for all samples, which reflected the high-quality graphene films were obtained. The composition of Cu atoms played an important role in the growth of graphene films. Based on the dissolution precipitation mechanism of Ni and the absorption and self-limiting mechanism of Cu on the Cu/Ni substrates, it has been found that the layers of graphene was restrained by the composition of Cu atoms. Different layers of high-quality graphene films were obtained. A new growth mechanism of fabrication method was proposed by this investigation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
