Abstract
Carbon-doped InGaP/GaAs/InGaP double heterostructure bipolar transistors with 25 Å setback layer are grown by chemical beam epitaxy. Transistors with nonalloyed base contacts show a very high common emitter current gain of 120 and very low collector saturation voltage of 75 mV at room temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
