Abstract
We prepared InGaP/GaAs/InGaP V-groove heterostructures incorporating quantum wires using metalorganic chemical vapour deposition technique. Influence of the growth temperature on the facetting and growth rate according to the crystallographic orientation was studied. Low temperature photoluminescence was used for characterisation of quantum structures prepared. To enhance a photoluminescence signal from quantum wire, the two step Au evaporation was used with the aim to suppress PL signals from the sidewalls.
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