Abstract
What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collector-emitter offset voltage and the knee voltage of the device are ∼150 mV and <1 V, respectively. The maximum gain of the device is∼25 at collector current of∼100 mA. The collector and base ideality factor are ∼1.01 and ∼1.4, respectively. These results show the good potential for integrating the InGaP/GaAs heterojunction bipolar transistor on Si substrate using the compositionally graded SiGe buffer layer approach.
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