Abstract
A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n/sup +/-GaAs/p/sup +/-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performance over a wider temperature operation range of 30-210/spl deg/C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications.
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