Abstract
The growth of ZnSe on pseudomorphic and partially relaxed (In,Ga)P epitaxial buffer layers has been investigated. The (In,Ga)P and ZnSe layers were grown in separate gas source molecular beam epitaxy systems using elemental sources for the cation species and cracked PH 3 and H 2Se for the anion species. Surface morphology studies using scanning electron microscopy showed that the ZnSe layers were featureless at a magnification of 1.2x10 4. Four crystal (400) X-ray rocking curves indicated that the ZnSe full width at half maximum (FWHM) was 130″, while the pseudomorphic (In,Ga)P buffer layer FWHM was 18″. The (511) reflections of X-ray rocking curves were used to measure the residual strain as well as the composition in the (In,Ga)P buffer layers. The low temperature photoluminescence spectra from the ZnSe films grown on partially relaxed (In,Ga)P exhibited intensities of the donor-bound and free exciton transitions of nearly equal magnitude, as well as transitions due to extended defects, suggesting highly pure material. The luminescence from the (In,Ga)P buffer layers was also detected.
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