Abstract
GaN-based InGaN/GaN self-organized quantum dots and InGaN quantum dots (disks) in GaN nanowires are important nanostructures with potential advantages over planar quantum wells, including luminescence at the longer visible wavelengths. We describe the epitaxy and characteristics of red-emitting InGaN/GaN quantum dot edge-emitting lasers and InGaN/GaN nanowire light emitting diodes, which can be used in a host of applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.