Abstract
Uniform arrays of GaN nanocolumns periodically arranged in triangular-lattice, at the top regions of which InGaN/GaN multiple quantum wells (MQWs) were integrated, were grown on GaN templates by rf-MBE using Ti-mask selective area growth (SAG) technique [1]. Here the lattice constant of array L and nanocolumn diameter D were controlled from 200 to 300 nm and from 0.7L to 0.9L, respectively. Figure 1 shows top and bird's-eye SEM views of a nanocolumn array with L = 275 nm and D = 210 nm; excellent
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