InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation)

Abstract

The self-consistent 6-band k∙p calculations of AlGaInN barriers surrounding the InGaN quantum well (QW) emitting at ~495 nm show ~ 30% increase in material gain and ~ 40% reduction in threshold current density, compared to the conventional InGaN / GaN QW structure. Following the guidance of our computational study, the InGaN / AlGaInN multiple QW structures with different AlGaInN alloy compositions lattice-matched to GaN are grown via MOVPE. The use of InGaN / AlInN QW structure resulted in improved luminescence, and the results of InGaN / AlGaInN with larger compositional range will also be presented.