Abstract
Group-III nitride semiconductors covering infrared, visible and ultraviolet spectral range has direct band gaps changing from 0,7 eV (InN) to 3,4 eV (GaN). LEDs emit red, blue, green light, ultraviolet (UV) laser diodes (LD), UV light detectors and high power electronic devices are obtained and commercialized based on group-III nitride materials. InGaN semiconductor can be deposited by different techniques such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD). In this study, InGaN thin films were prepared on Si and glass substrates as well as on GaN layer by termionic vacuum arc (TVA) which is a plasma asisted thin film deposition technique. The film was deposited at 10-6 torr working pressure, 18A filament current. Plasma was produced at 200 V with 0,6A plasma current. The purpose of this research is to investigate the properties of InGaN thin films. X-ray diffraction (XRD) spectrophotometer was used to analyze microstructure of the deposited films. Scanning electon microscopy (SEM) were used for surface morphology characterizations. Compositional analysis was done by energy dispersive X-ray spectroscopy (EDAX).
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