Abstract
The morphology of thin InGaN layers grown at varying temperature by metalorganic chemical vapor deposition (MOCVD) has been studied by atomic force microscope (AFM). The surface morphology undergoes a transition process from three-dimensional (3D) island growth mode to two-dimensional (2D) nucleated mound and hillock growth mode and finally to layer-by-layer step-meandering and step flow growth mode. The changes in morphology were analyzed from a thermodynamic (mostly based on the BCF theory of crystal growth by Burton, Cabrera and Frank) and kinetic (mostly the ESB theory based on the Ehrlich-Schwöbel barrier) perspective. Power spectral density (PSD) analysis of AFM surface images is used to determine the dominant smoothing mechanisms that contribute to the feature of surface morphology of InGaN, and validate our analysis based on BCF and ESB theories.
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