Abstract
High-power InGaN single-quantum-well structure (SQW) blue/green light-emitting diodes (LEDs) and violet multiquantum-well (MQW) structure laser diodes (LDs) were fabricated. The LDs emitted coherent light at 390–440 nm from an InGaN-based MQW structure at room temperature. Lasing was observed up to a pulsed current duty ratio of 40%. The operating voltage of the LDs at the threshold was around 11 V. The emission of the SQW LEDs is due to a recombination of excitons localized at certain potential minima in InGaN quantum well.
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