InGaN light-emitting diodes with embedded nanoporous GaN distributed Bragg reflectors

Abstract

InGaN-based light-emitting diodes (LEDs) with embedded conductive nanoporous GaN/undoped GaN (NP-GaN/u-GaN) distributed Bragg reflectors (DBRs) were demonstrated. Nanoporous GaN DBR structures were fabricated by pulsed 355 nm laser scribing and electrochemical etching processes. Heavily Si-doped n-type GaN:Si layers (n+-GaN) in an eight-period n+-GaN/u-GaN stack structure were transformed into a low-refractive-index, conductive nanoporous GaN structure. The measured center wavelength, peak reflectivity, and bandwidth of the nanoporous GaN DBR structure were 417 nm, 96.7%, and 34 nm, respectively. Resonance cavity modes of the photoluminescence spectra were observed in the treated LED structure with the nanoporous DBR structure.