Abstract
A quasi-quantum-dot (QQD)-shaped InGaN-GaN multilple-quantum-well light-emitting diode (LED) was achieved using a silicon carbon nitride (SiCN) interfacial layer. QQDs with ~100-nm diameter and ~4-nm height were uniformly formed inside the InGaN active layer due to strain and affinity difference between the InGaN and SiCN layer. The surface morphology and structural properties of QQD-LED were measured with atomic force microscopy, secondary ion mass spectrometry, and X-ray diffraction. Device performance of QQD-LEDs were evaluated and compared with normal LEDs. The QQD-LED showed ~15% higher photoluminescence intensity and ~10% higher optical output power
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